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NGTB30N60IHLWG PDF Datasheet

The NGTB30N60IHLWG is Igbt ( Insulated Gate Bipolar Transistor ). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 NGTB30N60IHLWG
IGBT ( Insulated Gate Bipolar Transistor )

NGTB30N60IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft an

ON Semiconductor
ON Semiconductor
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Part No Description ( Function) Manufacturers PDF
NGTB30N60FWG   IGBT

NGTB30N60FWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features • Optimized

ON Semiconductor
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NGTB30N60L2WG   N-Channel IGBT

Ordering number : ENA2308B NGTB30N60L2WG N-Channel IGBT With Low VF Switching Diode 600V, 30A, VCE(sat);1.4V http://onsemi.com Features • IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V) • IGBT IC=100A (Tc=25°C) • IGBT tf=80ns typ. • Low switching loss in higher frequency ap

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