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NGTB30N120IHSWG PDF Datasheet

The NGTB30N120IHSWG is Igbt ( Insulated Gate Bipolar Transistor ). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 NGTB30N120IHSWG
IGBT ( Insulated Gate Bipolar Transistor )

NGTB30N120IHSWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a

ON Semiconductor
ON Semiconductor
pdf

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Recommended search results related to NGTB30N120IHSWG

Part No Description ( Function) Manufacturers PDF
NGTB30N120IHLWG   IGBT

NGTB30N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The

ON Semiconductor
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NGTB30N120IHRWG   IGBT

NGTB30N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state vo

ON Semiconductor
ON Semiconductor
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NGTB30N120LWG   IGBT

NGTB30N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low on−state voltage and minimal switching loss, the I

ON Semiconductor
ON Semiconductor
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C4D30120D   Silicon Carbide Schottky Diode

C4D30120D–Silicon Carbide Schottky Diode Z-Rec™ Rectifier Features VRRM = IF; TC<135˚C 1200 V = 43 A 192 nC Qc = Package • • • • • 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching

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DM130120   15V / 30V Selectable Output & 122 Hi-V Channels Driver IC

DM130120 15V / 30V Selectable Output & 122 Hi-V Channels Driver IC DAVICOM Semiconductor, Inc. DM130120 15V / 30V Selectable Output & 122 Hi-V Channels Driver IC DATA SHEET Preliminary Doc No: DM130120-11-MCO-DS-P01 July 11, 2016 Preliminary Version: DM130120-11-MCO-DS-P01 July

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