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Datasheet NGTB25N120LWG Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 NGTB25N120LWG   IGBT

NGTB25N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low on−state voltage and minimal switching loss, the IGBT is well suited f
 ON Semiconductor
ON Semiconductor		 datasheet NGTB25N120LWG pdf

NGTB25N120 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
NGTB25N120IHLWG

IGBT

NGTB25N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The
 ON Semiconductor
ON Semiconductor		 datasheet pdf - ON Semiconductor
NGTB25N120LWG

IGBT

NGTB25N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low on−state voltage and minimal switching loss, the I
 ON Semiconductor
ON Semiconductor		 datasheet pdf - ON Semiconductor
NGTB25N120FLWG

IGBT

NGTB25N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suite
 ON Semiconductor
ON Semiconductor		 datasheet pdf - ON Semiconductor


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