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Datasheet NGTB25N120IHLWG Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 NGTB25N120IHLWG   IGBT

NGTB25N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited
 ON Semiconductor
ON Semiconductor		 datasheet NGTB25N120IHLWG pdf

NGTB25N120IH Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
NGTB25N120IHLWG

IGBT

NGTB25N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The
 ON Semiconductor
ON Semiconductor		 datasheet pdf - ON Semiconductor


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Número de pieza Descripción Fabricantes PDF
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