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NGTB20N120IHLWG PDF Datasheet

The NGTB20N120IHLWG is Igbt ( Insulated Gate Bipolar Transistor ). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 NGTB20N120IHLWG
IGBT ( Insulated Gate Bipolar Transistor )

NGTB20N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a

ON Semiconductor
ON Semiconductor
pdf

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Recommended search results related to NGTB20N120IHLWG

Part No Description ( Function) Manufacturers PDF
NGTB20N120IHRWG   IGBT

NGTB20N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance in demanding switching applications, and offers low on−state volta

ON Semiconductor
ON Semiconductor
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NGTB20N120IHSWG   IGBT

NGTB20N120IHSWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The

ON Semiconductor
ON Semiconductor
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NGTB20N120LWG   IGBT

NGTB20N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The I

ON Semiconductor
ON Semiconductor
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C2D20120   Silicon Carbide Schottky Diode

C2D20120–Silicon Carbide Schottky Diode Zero Recovery® Rectifier Features • • • • • • • VRRM = 1200 V IF = 20 A Qc =122 nC Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Tempe

CREE
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C2D20120D   Silicon Carbide Schottky Diode

C2D20120D Silicon Carbide Schottky Diode VRRM = 1200 V Zero R Features ecovery® Rectifier Package IF (TC=135˚C) = 29 A** Qc = 122 nC** • • • • • • • 1.2kV Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Op

Cree
Cree
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[1]    

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1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

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