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Datasheet NE960R5 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | NE960R5 | 0.5 W X / Ku-BAND POWER GaAs MES FET PRELIMINARY DATA SHEET
N-CHANNEL GaAs MES FET
NE960R5 SERIES
0.5 W X, Ku-BAND POWER GaAs MES FET
DESCRIPTION
The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.5 watt of output |  NEC | data |
| 2 | NE960R500 | 0.5 W X / Ku-BAND POWER GaAs MES FET PRELIMINARY DATA SHEET
N-CHANNEL GaAs MES FET
NE960R5 SERIES
0.5 W X, Ku-BAND POWER GaAs MES FET
DESCRIPTION
The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.5 watt of output | NEC | data |
| 3 | NE960R575 | 0.5 W X / Ku-BAND POWER GaAs MES FET PRELIMINARY DATA SHEET
N-CHANNEL GaAs MES FET
NE960R5 SERIES
0.5 W X, Ku-BAND POWER GaAs MES FET
DESCRIPTION
The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.5 watt of output | NEC | data |
NE9 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | NE9000xx | (NE9000/1/2 Series) Ku-Band Medium Power GaAs MESFET
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DataSheet4  NEC Electronics data | | |
| 2 | NE900175 | (NE9000/1/2 Series) Ku-Band Medium Power GaAs MESFET
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| 3 | NE9001xx | (NE9000/1/2 Series) Ku-Band Medium Power GaAs MESFET
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DataSheet4 NEC Electronics data | | |
| 4 | NE9002xx | (NE9000/1/2 Series) Ku-Band Medium Power GaAs MESFET
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DataSheet4 NEC Electronics data | | |
| 5 | NE944 | NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NPN SILICON OSCILLATOR AND MIXER TRANSISTOR
FEATURES
• LOW COST • HIGH GAIN BANDWIDTH PRODUCT: fT = 2000 MHz TYP • LOW COLLECTOR TO BASE TIME CONSTANT: CC•r b'b = 5 ps TYP • LOW FEEDBACK CAPACITANCE: CRE= 0.55 pF TYP
NE944 SERIES
DESCRIPTION
The NE944 series of NPN silicon epitaxial bipo NEC transistor | | |
| 6 | NE94430 | NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NPN SILICON OSCILLATOR AND MIXER TRANSISTOR
FEATURES
• LOW COST • HIGH GAIN BANDWIDTH PRODUCT: fT = 2000 MHz TYP • LOW COLLECTOR TO BASE TIME CONSTANT: CC•r b'b = 5 ps TYP • LOW FEEDBACK CAPACITANCE: CRE= 0.55 pF TYP
NE944 SERIES
DESCRIPTION
The NE944 series of NPN silicon epitaxial bipo NEC transistor | | |
| 7 | NE94433 | NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NPN SILICON OSCILLATOR AND MIXER TRANSISTOR
FEATURES
• LOW COST • HIGH GAIN BANDWIDTH PRODUCT: fT = 2000 MHz TYP • LOW COLLECTOR TO BASE TIME CONSTANT: CC•r b'b = 5 ps TYP • LOW FEEDBACK CAPACITANCE: CRE= 0.55 pF TYP
NE944 SERIES
DESCRIPTION
The NE944 series of NPN silicon epitaxial bipo NEC transistor | |
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