No | Part number | Description ( Function ) | Manufacturers | |
3 | NE68939 | NPN Silicon Transistor PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR FEATURES • OUTPUT POWER AT 1dB COMPRESSION POINT: 24.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 • 4 PIN MINI MOLD PACKAGE: NE68939 NE68939 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 39 +0.2 2.8 -0.3 +0.2 1.5 -0.1 +0.10 0.4 -0.05 (LEADS 2, 3, 4) 2.9 ± 0.2 0.95 0.85 2 3 1.9 1 4 DESCRIPTION T |
NEC |
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2 | NE68939-T1 | NPN Silicon Transistor PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR FEATURES • OUTPUT POWER AT 1dB COMPRESSION POINT: 24.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 • 4 PIN MINI MOLD PACKAGE: NE68939 NE68939 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 39 +0.2 2.8 -0.3 +0.2 1.5 -0.1 +0.10 0.4 -0.05 (LEADS 2, 3, 4) 2.9 ± 0.2 0.95 0.85 2 3 1.9 1 4 DESCRIPTION T |
NEC |
|
1 | NE68939-T1 | NPN Silicon Transistor PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR FEATURES • OUTPUT POWER AT 1dB COMPRESSION POINT: 24.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 • 4 PIN MINI MOLD PACKAGE: NE68939 NE68939 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 39 +0.2 2.8 -0.3 +0.2 1.5 -0.1 +0.10 0.4 -0.05 (LEADS 2, 3, 4) 2.9 ± 0.2 0.95 0.85 2 3 1.9 1 4 DESCRIPTION T |
NEC |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |