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NE68800 PDF Datasheet

The NE68800 is Necs NPN SilICon High Frequency Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 NE68800
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

NONLINEAR MODEL SCHEMATIC CCB NE68800 Q1 LB CCE LC LE BJT NONLINEAR MODEL PARAMETERS (1) Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 3.8e-16 135.7 1 28 0.6 3.8e-15 1.49 12.3 1.1 3.5 0.06 3.5e-16 1.62 0.4 6.14 3.5 0.001 4.2 0.796e-12 0.71 0.38 0.549e-12 0.65 Parameters MJC XCJC CJS VJS MJS FC TF XTF V

NEC
NEC
pdf

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Recommended search results related to NE68800

Part No Description ( Function) Manufacturers PDF
5962-8688001QA   CMOS ARINC Bus Interface Circuit

HS-3282 REFERENCE AN400 March 1997 CMOS ARINC Bus Interface Circuit Description Features • ARlNC Specification 429 Compatible The HS-3282 is a high performance CMOS bus interface circuit that is intended to meet the requirements of ARINC • Data Rates of 100 Kilobits or 12

Intersil Corporation
Intersil Corporation
datasheet pdf
5962-8688001XA   CMOS ARINC Bus Interface Circuit

HS-3282 REFERENCE AN400 March 1997 CMOS ARINC Bus Interface Circuit Description Features • ARlNC Specification 429 Compatible The HS-3282 is a high performance CMOS bus interface circuit that is intended to meet the requirements of ARINC • Data Rates of 100 Kilobits or 12

Intersil Corporation
Intersil Corporation
datasheet pdf
NE688   SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR

SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA • AVAILABLE IN SIX LOW COST PLASTIC SURFACE

CEL
CEL
datasheet pdf
NE68819   NONLINEAR MODEL

NONLINEAR MODEL SCHEMATIC NE68819 CCBPKG 0.08 pF CCB LBX Base 0.19 nH 1.12 nH CBEPKG 0.3 pF LB 0.24 pF CCE 0.27 pF LE 0.6 nH LEX 0.19 nH Emitter Q1 LCX 0.5 nH Collector CCEPKG 0.3 pF BJT NONLINEAR MODEL PARAMETERS (1) Parameters IS BF NF VAF IKF ISE NE B

NEC
NEC
datasheet pdf
NE688M03   NPN SILICON TRANSISTOR

PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M03 FEATURES • NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT: fT = 9.5 GHz LOW NOISE FIGURE

NEC
NEC
datasheet pdf

[1]    

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Part Number Function Manufacturers PDF
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The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
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On Semiconductor
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