No | Part number | Description ( Function ) | Manufacturers | |
6 | NE688 | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA • AVAILABLE IN SIX LOW COST PLASTIC SURFACE MOUNT PACKAGE STYLES • ALSO AVAILABLE IN CHIP FORM 18 (SOT 343 STYLE) NE688 SERIES 19 (3 PIN ULT |
CEL |
|
5 | NE68800 | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR NONLINEAR MODEL SCHEMATIC CCB NE68800 Q1 LB CCE LC LE BJT NONLINEAR MODEL PARAMETERS (1) Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 3.8e-16 135.7 1 28 0.6 3.8e-15 1.49 12.3 1.1 3.5 0.06 3.5e-16 1.62 0.4 6.14 3.5 0.001 4.2 0.796e-12 0.71 0.38 0.549e-12 0.65 Parameters MJC XCJC CJS VJS MJS FC TF XTF V |
NEC |
|
4 | NE68819 | NONLINEAR MODEL NONLINEAR MODEL SCHEMATIC NE68819 CCBPKG 0.08 pF CCB LBX Base 0.19 nH 1.12 nH CBEPKG 0.3 pF LB 0.24 pF CCE 0.27 pF LE 0.6 nH LEX 0.19 nH Emitter Q1 LCX 0.5 nH Collector CCEPKG 0.3 pF BJT NONLINEAR MODEL PARAMETERS (1) Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 3.8e-16 135.7 1 28 0.6 3.8e-15 1.49 12.3 |
NEC |
|
3 | NE688M03 | NPN SILICON TRANSISTOR PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M03 FEATURES • NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT: fT = 9.5 GHz LOW NOISE FIGURE: NF = 1.7 dB at 2 GHz HIGH COLLECTOR CURRENT: ICMAX = 100 mA OUTLINE DIMENSIONS (Units in mm) PACK |
NEC |
|
2 | NE688M13 | NPN SILICON TRANSISTOR PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M13 FEATURES • NEW MINIATURE M13 PACKAGE: – Small transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm package height – Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT: fT = 9.5 GHz LOW NOISE FIGURE: NF = 1.7 dB at 2 GHz HIGH COLLECTOR CURRENT: IC MAX = 100 mA O |
NEC |
|
1 | NE688M23 | NPN SILICON TRANSISTOR PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M23 FEATURES • NEW MINIATURE M23 PACKAGE: – World's smallest transistor package footprint — leads are completely underneath package body – Low profile/0.55 mm package height – Ceramic substrate for better RF performance HIGH GAIN BANDWIDTH PRODUCT: fT = 9.5 GHz LOW NOISE FIGURE: NF = 1.7 dB at 2 |
NEC |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |