No | Part number | Description ( Function ) | Manufacturers | |
8 | NE685 | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • LOW COST • SMALL AND ULTRA SMALL SIZE PACKAGES • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH GAIN BANDWIDTH PRODUCT: fT of 12 GHz • NOISE FIGURES OF 1.5 dB AT 2.0 GHZ NE685 SERIES rs e b m : u E n ot T t n O r . e a N r n p a g E i DESCRIPTION g t S s n e A i e e E d w h s w PL ll o a r |
NEC |
|
7 | NE68518 | NPN EPITAXIAL SILICON RF TRANSISTOR DATA SHEET NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD (18) NE68518 / 2SC5015 NPN SILICON RF TRANSISTOR FEATURES • High fT: fT = 12 GHz TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz • Low voltage operation • Low noise and high gain • 4-pin super minimold (18) package ORDERING INFORMATION Part Number 2SC5015 2SC501 |
CEL |
|
6 | NE68518 | NONLINEAR MODEL NONLINEAR MODEL SCHEMATIC CCBPKG CCB LCX LBX Base LB LC CCE Collector NE68518 Q1 CBEPKG LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 7e-16 109 1 15 0.19 7.9e-13 2.19 1 1.08 12.4 Infinity 0 2 1.3 10 8.34 0.009 10 0.4e-12 0.81 0.5 0.18e-12 0.75 Parameters MJC XCJC C |
NEC |
|
5 | NE68519 | NONLINEAR MODEL NONLINEAR MODEL SCHEMATIC CCBPKG CCB LCX LBX Base LB CCE Collector NE68519 Q1 LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 7.0e-16 109 1 15 0.19 7.90e-13 2.19 1 1.08 12.4 Infinity 0 2 1.3 10 8.34 0.009 10 0.4e-12 0.81 0.5 0.18e-12 0.75 Paramete |
NEC |
|
4 | NE685M03 | NPN SILICON TRANSISTOR PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE685M03 FEATURES • NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT: fT = 12 GHz LOW NOISE FIGURE: NF = 1.5 dB at 2 GHz OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M03 1.2±0.05 0.8±0.1 2 � |
NEC |
|
3 | NE685M13 | NPN SILICON TRANSISTOR NEC's NPN SILICON TRANSISTOR NE685M13 FEATURES • NEW MINIATURE M13 PACKAGE: – Small transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm package height – Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT: fT = 12 GHz OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M13 0.15+0.1 ñ0.05 0.7±0.05 0.5+0.1 ñ0.05 0.2 |
CEL |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |