No | Part number | Description ( Function ) | Manufacturers | |
3 | NE68018 | NONLINEAR MODEL NONLINEAR MODEL SCHEMATIC CCBPKG CCB LC LBX Base LB CCE LCX Collector NE68018 Q1 CBEPKG LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 3.84e-16 124.9 1.05 11.9 0.027 1.0e-14 2.17 1 1.05 Infinity Infinity 0 2 0.6 17.9 1.02 4.01e-4 10.46 0.358e-12 0.71 0.5 0.162e-12 0 |
NEC |
|
2 | NE68018 | NPN SILICON HIGH FREQUENCY TRANSISTOR NoiseDFigure,INF(dB)SCONTINUED Associated Gain, GA (dB) SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE DESCRIPTION The NE680 series of NP |
CEL |
|
1 | NE68018-T1 | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE 00 (CHIP) NE680 SERIES E B 35 (MICRO-X) NEC's NE680 series of NPN epitaxial silicon transistors is designed for low |
NEC |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |