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Datasheet NE5520 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | NE5520 | LVDT Signal Conditioner
DataSheet 4 U .com
DataSheet 4 U .com
DataSheet 4 U .com
DataSheet 4 U .com
DataSheet 4 U .com
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 Ideal Semiconductor |
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| 3 | NE5520279A | NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET NEC'S 3.2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET
FEATURES
• LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX • HIGH OUTPUT POWER: +32 dBm TYP
5.7 MAX. 0.6±0.15
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 79A
(Bottom View)
4.2 MAX. Source 1.5±0.2 Source
0X00 |
 NEC |
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| 2 | NE5520279A-T1 | NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET NEC'S 3.2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET
FEATURES
• LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX • HIGH OUTPUT POWER: +32 dBm TYP
5.7 MAX. 0.6±0.15
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 79A
(Bottom View)
4.2 MAX. Source 1.5±0.2 Source
0X00 |
NEC |
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| 1 | NE5520379A | 3.2V Operation Silicon RF Power LDMOS FET w
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NEC |
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