Datasheet NE52118-T1 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	NE52118-T1	L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT PRELIMINARY DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52118 L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT FEATURES • For Low Noise & High Gain amplifiers NF = 1.0 dB TYP. Ga = 15.0 dB TYP. MSG = 15.0 dB TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω) OIP3 = 15 dBm TYP. (@f =	NEC

NE52118 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
NE52118-T1	L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT PRELIMINARY DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52118 L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT FEATURES • For Low Noise & High Gain amplifiers NF = 1.0 dB TYP. Ga = 15.0 dB TYP. MSG = 15.0 dB TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω) OIP3	NEC
NE52118	L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT PRELIMINARY DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52118 L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT FEATURES • For Low Noise & High Gain amplifiers NF = 1.0 dB TYP. Ga = 15.0 dB TYP. MSG = 15.0 dB TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω) OIP3	NEC

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Número de pieza	Descripción	Fabricantes	PDF
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