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Datasheet NE3505M04 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | NE3505M04 | HETERO JUNCTION FIELD EFFECT TRANSISITOR DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISITOR
NE3505M04
L to C BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET
FEATURES
- Super Low Noise Figure & Associated Gain : NF=0.4dB TYP. Ga=15.5dB TYP. @f=4GHz NF=0.35dB TYP. Ga=17dB TYP. @f=2.4GHz (Reference Only) NF=0.45dB TYP. Ga=14dB | California Eastern Labs | data |
NE3 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | NE3002-VA10A | Near edge thermal printhead (300 dots / inch) Printheads
Near edge thermal printhead (300 dots / inch)
NE3002-VA10A
The NE3002-VA10A is a near edge thin-film thermal printhead, where the printing medium passes straight through at printing speeds up to 8 inch / second. It is suited for high-speed label printers. FApplications Bar code printers ROHM Semiconductor data | | |
2 | NE3004-VA10A | Near edge thermal printhead (300 dots / inch) Printheads
Near edge thermal printhead (300 dots / inch)
NE3004-VA10A
The NE3004-VA10A is a near edge thin-film thermal printhead where the printing medium passes straight through. This printhead is capable of printing speeds up to 8 inch / second and is suited for label printers. FApplications Bar ROHM Semiconductor data | | |
3 | NE321000 | C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DATA SHEET
HETERO JUNCTION FIELDEFFECT TRANSISTOR
NE321000
C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
DESCRIPTION
The NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable NEC amplifier | | |
4 | NE321000 | ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
FEATURES
• SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz
Noise Figure, NF (dB)
NE321000
NOISE FIGURE & ASSOCIATED GAIN vs. DRAIN CURRENT
VDS = 2 V f = 12 GHz 15 GA 14 13 2.0 1.5 1.0 0.5 NF 0 10 20 30 12 11
• GATE LENGTH: ≤0.2 µm CEL data | | |
5 | NE3210S01 | X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3210S01
X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET
DESCRIPTION
The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable NEC data | | |
6 | NE3210S01-T1 | X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3210S01
X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET
DESCRIPTION
The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable NEC data | | |
7 | NE3210S01-T1B | X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3210S01
X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET
DESCRIPTION
The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable NEC data | |
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Número de pieza | Descripción | Fabricantes | |
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