No | Part number | Description ( Function ) | Manufacturers | |
1 | NE02112 | NPN Silicon High Frequency Transistor |
NEC |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to NE02112 |
Part No | Description ( Function) | Manufacturers | |
NE021 | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E NE021 SERIES • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression s r e b m : u E n T t |
ETC |
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NE021 | NPN SILICON HIGH FREQUENCY TRANSISTOR |
NEC |
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NE021 | NPN SILICON HIGH FREQUENCY TRANSISTOR NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression B E NE021 SERIES DESCRIPTION NEC's NE021 |
CEL |
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NE021 | NPN Silicon High Frequency Transistor |
NEC |
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NE02100 | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E NE021 SERIES • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression s r e b m : u E n T t |
ETC |
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Part Number | Function | Manufacturers | |
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Vishay |
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ON Semiconductor |
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