No | Part number | Description ( Function ) | Manufacturers | |
1 | NDS9407 | Single P-Channel Enhancement Mode Field Effect Transistor June 1999 NDS9407 Single P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstan |
Fairchild |
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CEM9407A | P-Channel Enhancement Mode Field Effect Transistor CEM9407A P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -60V, -3.7A, RDS(ON) = 125mΩ @VGS = -10V. RDS(ON) = 165mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is |
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