No | Part number | Description ( Function ) | Manufacturers | |
1 | NDS8928 | Dual N & P-Channel Enhancement Mode Field Effect Transistor July 1996 NDS8928 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching perform |
Fairchild |
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Recommended search results related to NDS8928 |
Part No | Description ( Function) | Manufacturers | |
CXD8928R | CMOS inner Error Correction Decoder ********** C-MOS INNER ERROR CORRECTION DECODER - TOP VIEW 228 225 220 215 210 205 200 195 190 185 180 175 170 165 CXD8928R(1/4) IL08 160 VDD(+3.3V) VDD(+3.3V) VDD(+3.3V) VDD(+3.3V) GND GND GND GND 229 230 GND GND 155 153 152 150 GND 235 GND 145 VDD(+3.3V) www. |
ETC |
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FDS8928A | Dual N & P-Channel Enhancement Mode Field Effect Transistor July 1998 FDS8928A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density |
Fairchild Semiconductor |
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KDS8928A | Dual N & P-Channel Enhancement Mode Field Effect Transistor SMD Type Dual N & P-Channel Enhancement Mode Field Effect Transistor KDS8928A Transistors IC Features N-Channel 5.5 A, 30 V RDS(ON) = 0.030 RDS(ON) = 0.038 P-Channel -4 A, -20 V RDS(ON) = 0.055 RDS(ON) = 0.070 @ VGS =- 4.5 V @ VGS =-2.5V @ VGS = 4.5V @ VGS |
Guangdong Kexin Industrial |
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NDS8926 | Dual N-Channel Enhancement Mode Field Effect Transistor July 1996 NDS8926 Dual N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especia |
Fairchild |
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NDS8934 | Dual P-Channel Enhancement Mode Field Effect Transistor March 1996 NDS8934 Dual P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especi |
Fairchild |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |