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NDS8928 PDF Datasheet

The NDS8928 is Dual N & P-channel Enhancement Mode Field Effect Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 NDS8928
Dual N & P-Channel Enhancement Mode Field Effect Transistor

July 1996 NDS8928 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching perform

Fairchild
Fairchild
pdf

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Recommended search results related to NDS8928

Part No Description ( Function) Manufacturers PDF
CXD8928R   CMOS inner Error Correction Decoder

********** C-MOS INNER ERROR CORRECTION DECODER - TOP VIEW 228 225 220 215 210 205 200 195 190 185 180 175 170 165 CXD8928R(1/4) IL08 160 VDD(+3.3V) VDD(+3.3V) VDD(+3.3V) VDD(+3.3V) GND GND GND GND 229 230 GND GND 155 153 152 150 GND 235 GND 145 VDD(+3.3V) www.

ETC
ETC
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FDS8928A   Dual N & P-Channel Enhancement Mode Field Effect Transistor

July 1998 FDS8928A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

Fairchild Semiconductor
Fairchild Semiconductor
datasheet pdf
KDS8928A   Dual N & P-Channel Enhancement Mode Field Effect Transistor

SMD Type Dual N & P-Channel Enhancement Mode Field Effect Transistor KDS8928A Transistors IC Features N-Channel 5.5 A, 30 V RDS(ON) = 0.030 RDS(ON) = 0.038 P-Channel -4 A, -20 V RDS(ON) = 0.055 RDS(ON) = 0.070 @ VGS =- 4.5 V @ VGS =-2.5V @ VGS = 4.5V @ VGS

Guangdong Kexin Industrial
Guangdong Kexin Industrial
datasheet pdf
NDS8926   Dual N-Channel Enhancement Mode Field Effect Transistor

July 1996 NDS8926 Dual N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especia

Fairchild
Fairchild
datasheet pdf
NDS8934   Dual P-Channel Enhancement Mode Field Effect Transistor

March 1996 NDS8934 Dual P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especi

Fairchild
Fairchild
datasheet pdf

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