Datasheet NDS8839H Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	NDS8839H	Complementary MOSFET Half Bridge March 1996 NDS8839H Complementary MOSFET Half Bridge General Description These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide supe	Fairchild

NDS88 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
NDS8852H	Complementary MOSFET Half Bridge February 1996 NDS8852H Complementary MOSFET Half Bridge General Description These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state r	Fairchild
NDS8858H	Complementry MOSFET Half Bridge July 1996 NDS8858H Complementary MOSFET Half Bridge General Description These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resis	Fairchild
NDS8839H	Complementary MOSFET Half Bridge March 1996 NDS8839H Complementary MOSFET Half Bridge General Description These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resi	Fairchild

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