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Datasheet NDP6030 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1NDP6030N-Channel Enhancement Mode Field Effect Transistor

July 1997 NDP6030 / NDB6030 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tail
Fairchild
Fairchild		transistor
2NDP6030N-Channel Logic Level Enhancement Mode Field Effect Transistor

July 1997 NDP6030 / NDB6030 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tail
Fairchild
Fairchild		transistor
3NDP6030P-Channel Logic Level Enhancement Mode Field Effect Transistor

July 1997 NDP6030 / NDB6030 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tail
Fairchild
Fairchild		transistor
4NDP6030LN-Channel Logic Level Enhancement Mode Field Effect Transistor

June 1996 NDP6030L / NDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process
Fairchild
Fairchild		transistor
5NDP6030PLP-Channel Logic Level Enhancement Mode Field Effect Transistor

June 1997 NDP6030PL / NDB6030PL P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density proce
Fairchild
Fairchild		transistor


NDP Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1NDP02N60ZN-Channel Power MOSFET, Transistor

NDF02N60Z, NDP02N60Z, NDD02N60Z N-Channel Power MOSFET 600 V, 4.0 W Features • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant http://onsemi.com VDSS 600 V RDS(on) (TYP) @ 1 A 4.0 W ABSOLUTE MAXIMUM RAT
ON Semiconductor
ON Semiconductor		mosfet
2NDP03N60ZN-Channel Power MOSFET, Transistor

NDF03N60Z, NDP03N60Z, NDD03N60Z N-Channel Power MOSFET 600 V, 3.3 W Features • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant http://onsemi.com VDSS 600 V RDS(on) (TYP) @ 1.2 A 3.3 W ABSOLUTE MAXIMUM R
ON Semiconductor
ON Semiconductor		mosfet
3NDP04N62ZN-Channel Power MOSFET, Transistor

NDF04N62Z, NDP04N62Z, NDD04N62Z N-Channel Power MOSFET 620 V, 1.8 W Features • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and RoHS Compliant http://onsemi.com VDSS 620 V RDS(ON) (TYP) @ 2 A 1.8 Ω ABSOLUTE MAXIMUM RATING
ON Semiconductor
ON Semiconductor		mosfet
4NDP05N50ZN-Channel Power MOSFET, Transistor

NDF05N50Z, NDP05N50Z, NDD05N50Z N-Channel Power MOSFET 500 V, 1.25 W Features • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant http://onsemi.com VDSS 500 V RDS(on) (TYP) @ 2.2 A 1.25 W ABSOLUTE MAXIMUM
ON Semiconductor
ON Semiconductor		mosfet
5NDP06N60ZSingle N-Channel TO-220FP MOSFET

NDF06N60Z, NDP06N60Z N-Channel Power MOSFET 0.98 W, 600 Volts Features • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant VDSS 600 V http://onsemi.com RDS(ON) (TYP) @ 3 A 0.98 Ω Applications • Adapter (Notebook, Printer,
ON Semiconductor
ON Semiconductor		mosfet
6NDP06N62ZN-Channel Power MOSFET, Transistor

NDF06N62Z, NDP06N62Z N-Channel Power MOSFET 620 V, 0.98 W, Features • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and RoHS Compliant VDSS 620 V Rating Drain−to−Source Voltage Continuous Drain Current RqJC Continuous Dra
ON Semiconductor
ON Semiconductor		mosfet
7NDP08N50ZN-Channel Power MOSFET, Transistor

DataSheet.in NDF08N50Z, NDP08N50Z N-Channel Power MOSFET 500 V, 0.69 W Features • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant VDSS 500 V http://onsemi.com RDS(ON) (TYP) @ 3.6 A 0.69 W ABSOLUTE MAXIMUM RATINGS (TC = 25�
ON Semiconductor
ON Semiconductor		mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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