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NDF04N60ZH PDF Datasheet

The NDF04N60ZH is N-channel Power MOSFET / Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 NDF04N60ZH
N-Channel Power MOSFET / Transistor

NDF04N60ZH Product Preview N-Channel Power MOSFET 600 V, 2.0 W Features • Low ON Resistance • Low Gate Charge • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Symbol Typ Unit Drain−to−Source Voltage Continuous Drain Current RqJC VDSS ID 60

ON Semiconductor
ON Semiconductor
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Part No Description ( Function) Manufacturers PDF
NDF04N60Z   N-Channel Power MOSFET / Transistor

NDF04N60Z, NDD04N60Z N-Channel Power MOSFET 600 V, 2.0 W Features • Low ON Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25°

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1410460C   Bobbin Type Inductors

www.murata-ps.com 1400 Series Bobbin Type Inductors FEATURES n RoHS compliant n Radial format n -40°C to 85°C operating temperature n Up to 13A IDC n 10μH to 22mH n Low DC resistance n Fully tinned leads n PCB mounting hole n Low temperature dependence n Backward compatible

Murata
Murata
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plerowTM ALN0460 Internally Matched LNA Module Description The plerowTM ALN-series is the compactly designed surface-mount module for the use of the LNA with or without the following gain blocks in the infrastructure equipment of the mobile wireless (CDMA, GS

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