No | Part number | Description ( Function ) | Manufacturers | |
1 | NDC7002N | Dual N-Channel Enhancement Mode Field Effect Transistor March 1996 NDC7002N Dual N-Channel Enhancement Mode Field Effect Transistor General Description These dual N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast swi |
Fairchild |
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Part No | Description ( Function) | Manufacturers | |
NDC7002 | Dual N-Channel Enhancement Mode Field Effect Transistor March 1996 NDC7002N Dual N-Channel Enhancement Mode Field Effect Transistor General Description These dual N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has |
Fairchild |
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2N7002 | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR VOLTAGE 60 Volts CURRENT 115 mAmp PACKAGE SOT-23 DESCRIPTION • N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel |
Pan Jit International Inc. |
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2N7002 | N-channel Trench MOSFET DISCRETE SEMICONDUCTORS DATA SHEET 2N7002 N-channel vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel vertical D-MOS transistor FEATURES • Direct interface to C-MOS, |
NXP Semiconductors |
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2N7002 | N-Channel Enhancement-Mode Vertical DMOS FETs Supertex inc. 2N7002 N-Channel Enhancement-Mode Vertical DMOS FETs Features ►►Free from secondary breakdown ►►Low power drive requirement ►►Ease of paralleling ►►Low CISS and fast switching speeds ►►Excellent thermal stability ►►Integral source-drain di |
Supertex Inc |
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2N7002 | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – JANUARY 1996 FEATURES * 60 Volt VCEO 2N7002 S D PARTMARKING DETAIL – 702 G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate-Source Voltage |
Zetex Semiconductors |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |