No | Part number | Description ( Function ) | Manufacturers | |
1 | NDB410BE | N-Channel Enhancement Mode Field Effect Transistor May 1994 NDP410A / NDP410AE / NDP410B / NDP410BE NDB410A / NDB410AE / NDB410B / NDB410BE N-Channel Enhancement Mode Field Effect Transistor General Description These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on- |
Fairchild |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to NDB410BE |
Part No | Description ( Function) | Manufacturers | |
NDB410A | N-Channel Enhancement Mode Field Effect Transistor May 1994 NDP410A / NDP410AE / NDP410B / NDP410BE NDB410A / NDB410AE / NDB410B / NDB410BE N-Channel Enhancement Mode Field Effect Transistor General Description These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell d |
Fairchild |
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NDB410AE | N-Channel Enhancement Mode Field Effect Transistor May 1994 NDP410A / NDP410AE / NDP410B / NDP410BE NDB410A / NDB410AE / NDB410B / NDB410BE N-Channel Enhancement Mode Field Effect Transistor General Description These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell d |
Fairchild |
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NDB410B | N-Channel Enhancement Mode Field Effect Transistor May 1994 NDP410A / NDP410AE / NDP410B / NDP410BE NDB410A / NDB410AE / NDB410B / NDB410BE N-Channel Enhancement Mode Field Effect Transistor General Description These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell d |
Fairchild |
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12C5410 | MCU Device Handbook 1 ¸öʱÖÓ / »úÆ÷ÖÜÆÚ £¬ ¸ßËÙ ¡¢ ¸ß¿É¿¿ £¬ 4 · P W M £¬ 8 ·¸ßËÙ A / D ת»» DIP-28/20 £¬ SOP-28/20 ³¬Ð¡·â×° 4· PWM/PCA/CCU ²¶»ñ / ±È½Ïµ¥Ôª 8051 1 ¸öʱÖÓ/ » |
ETC |
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1410 | (1410xx) Single Phase Bridge 200 V - 1,000 V Single Phase Bridge 12.0 A Forward Current 70 ns - 3000 ns Recovery Time 1402 - 1410 1402F - 1410F 1402UF - 1410UF ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage (Vrwm) Average Rectified Current @TC (Io) 5 |
VMI |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |