No | Part number | Description ( Function ) | Manufacturers | |
1 | NCP3135 | 5A Integrated Synchronous Buck Converter NCP3135 5 A Integrated Synchronous Buck Converter NCP3135 is a fully integrated synchronous buck converter for 3.3 V and 5 V step−down applications. It can provide up to 5 A DC load and 6 A instantaneous load current. NCP3135 supports high efficiency, fast transient response and provides power good indicator. The control scheme includes two operation modes: FCCM and automati |
ON Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to NCP3135 |
Part No | Description ( Function) | Manufacturers | |
2N3135 | Small Signal Transistors Small Signal Transistors TO-18 Case (Continued) TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ VCB (V) (V) (V) (µA) (V) MIN MIN MIN MAX *ICES **ICEV hFE @ IC @ VCE VCE (SAT) @ IC Cob fT NF ton (mA) (V) (V) (mA) (pF) (MHz) (dB) (ns) MIN MAX MAX MAX MIN MAX MAX toff (ns) MA |
Central Semiconductor |
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2SC3135 | PNP/NPN Epitaxial Planar Silicon Transistors Ordering number:ENN1049E PNP/NPN Epitaxial Planar Silicon Transistors 2SA1253/2SC3135 High-hFE, AF Amp Applications Features · High VEBO. · Wide ASO and high durability against breakdown. Package Dimensions unit:mm 2033A [2SA1253/2SC3135] 4.0 2.2 1.8 3.0 0.6 0.4 0.5 0.4 0 |
Sanyo Semicon Device |
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2SK3135 | Silicon N Channel MOS FET High Speed Power Switching 2SK3135(L),2SK3135(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-695B (Z) 3rd. Edition February 1999 Features • Low on-resistance R DS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 2 1 1 2 |
Hitachi Semiconductor |
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2SK3135L | Silicon N Channel MOS FET High Speed Power Switching 2SK3135(L),2SK3135(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-695B (Z) 3rd. Edition February 1999 Features • Low on-resistance R DS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 2 1 1 2 |
Hitachi Semiconductor |
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2SK3135S | Silicon N Channel MOS FET High Speed Power Switching 2SK3135(L),2SK3135(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-695B (Z) 3rd. Edition February 1999 Features • Low on-resistance R DS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 2 1 1 2 |
Hitachi Semiconductor |
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ON Semiconductor |
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