No | Part number | Description ( Function ) | Manufacturers | |
3 | NCE30H10 | NCE N-Channel Enhancement Mode Power MOSFET http://www.ncepower.com Pb Free Product NCE30H10 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =100A RDS(ON) <5.5mΩ @ VGS=10V (Typ:4mΩ) Schematic diagram ● High density |
NCE Power Semiconductor |
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2 | NCE30H10G | N-Channel Enhancement Mode Power MOSFET http://www.ncepower.com Pb Free Product NCE30H10G NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H10G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =100A RDS(ON) <2.5 mΩ @ VGS=10V RDS(ON) <3.5mΩ @ VGS=4.5V ● High density c |
NCE Power Semiconductor |
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1 | NCE30H10K | NCE N-Channel Enhancement Mode Power MOSFET http://www.ncepower.com Pb Free Product NCE30H10K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =100A RDS(ON) <5.5mΩ @ VGS=10V (Typ:4mΩ) ● High density cell design for |
NCE Power Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |