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NCE30H10 PDF Datasheet

The NCE30H10 is Nce N-channel Enhancement Mode Power MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




Notice


Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
3 NCE30H10
NCE N-Channel Enhancement Mode Power MOSFET

http://www.ncepower.com Pb Free Product NCE30H10 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =100A RDS(ON) <5.5mΩ @ VGS=10V (Typ:4mΩ) Schematic diagram ● High density

NCE Power Semiconductor
NCE Power Semiconductor
pdf
2 NCE30H10G
N-Channel Enhancement Mode Power MOSFET

http://www.ncepower.com Pb Free Product NCE30H10G NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H10G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =100A RDS(ON) <2.5 mΩ @ VGS=10V RDS(ON) <3.5mΩ @ VGS=4.5V ● High density c

NCE Power Semiconductor
NCE Power Semiconductor
pdf
1 NCE30H10K
NCE N-Channel Enhancement Mode Power MOSFET

http://www.ncepower.com Pb Free Product NCE30H10K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =100A RDS(ON) <5.5mΩ @ VGS=10V (Typ:4mΩ) ● High density cell design for

NCE Power Semiconductor
NCE Power Semiconductor
pdf

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