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NCE2302B PDF Datasheet

The NCE2302B is N-channel Enhancement Mode Power MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 NCE2302B
N-Channel Enhancement Mode Power MOSFET

http://www.ncepower.com Pb Free Product NCE2302B NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2302B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 20V,ID = 3.3A

NCE Power Semiconductor
NCE Power Semiconductor
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NCE2302   NCE N-Channel Enhancement Mode Power MOSFET

http://www.ncepower.com Pb Free Product NCE2302 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as

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2302   Class C Microwave

2302 2.0 Watt - 20 Volts, Class C Microwave 2300 MHz GENERAL DESCRIPTION The 2302 is a COMMON BASE transistor capable of providing 2 Watts Class C, RF output power at 2300 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness.

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2302   N-Channel MOSFET

SOT-23-3 Plastic-Encapsulate Transistors 2302 MOSFET(N-Channel) FEATURES TrenchFET Power MOSFET MARKING:A2SHB MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 20 V VGS Gate-Source voltage ±10 V ID Drain current

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