|
|
Datasheet N28F001BX-B70 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | N28F001BX-B70 | 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY
28F001BX-T 28F001BX-B 28F001BN-T 28F001BN-B
Y
High-Integration Blocked Architecture One 8 KB Boot Block w Lock Out Two 4 KB Parameter Blocks One 112 KB Main Block 100 000 Erase Program Cycles Per Block Simplified Program and Erase Automated Algorithms via O |  Intel Corporation | data |
N28 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | N2825TE400 | Phase Control Thyristor Date:- 25 April, 2013 Data Sheet Issue:- A3
Phase Control Thyristor Types N2825T#400 and N2825T#450
Development Type No.: NX247T#400 and NX247T#450
Absolute Maximum Ratings
VDRM VDSM VRRM VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1) Non-repetitive peak off-state voltage, (note  IXYS thyristor | | |
| 2 | N2825TE450 | Phase Control Thyristor Date:- 25 April, 2013 Data Sheet Issue:- A3
Phase Control Thyristor Types N2825T#400 and N2825T#450
Development Type No.: NX247T#400 and NX247T#450
Absolute Maximum Ratings
VDRM VDSM VRRM VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1) Non-repetitive peak off-state voltage, (note IXYS thyristor | | |
| 3 | N2825TJ400 | Phase Control Thyristor Date:- 30th April, 2012 Data Sheet Issue:- A1
Provisional Data
Phase Control Thyristor Types N2825TJ400 to N2825TJ450
Development Type No.: NX247TJ450
Absolute Maximum Ratings
VDRM VDSM VRRM VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1) Non-repetitive peak off-state voltage, (n IXYS thyristor | | |
| 4 | N2825TJ450 | Phase Control Thyristor Date:- 30th April, 2012 Data Sheet Issue:- A1
Provisional Data
Phase Control Thyristor Types N2825TJ400 to N2825TJ450
Development Type No.: NX247TJ450
Absolute Maximum Ratings
VDRM VDSM VRRM VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1) Non-repetitive peak off-state voltage, (n IXYS thyristor | | |
| 5 | N28F001BX-B120 | 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY
28F001BX-T 28F001BX-B 28F001BN-T 28F001BN-B
Y
High-Integration Blocked Architecture One 8 KB Boot Block w Lock Out Two 4 KB Parameter Blocks One 112 KB Main Block 100 000 Erase Program Cycles Per Block Simplified Program and Erase Automated Algorithms via O Intel Corporation data | | |
| 6 | N28F001BX-B150 | 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY
28F001BX-T 28F001BX-B 28F001BN-T 28F001BN-B
Y
High-Integration Blocked Architecture One 8 KB Boot Block w Lock Out Two 4 KB Parameter Blocks One 112 KB Main Block 100 000 Erase Program Cycles Per Block Simplified Program and Erase Automated Algorithms via O Intel Corporation data | | |
| 7 | N28F001BX-B70 | 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY
28F001BX-T 28F001BX-B 28F001BN-T 28F001BN-B
Y
High-Integration Blocked Architecture One 8 KB Boot Block w Lock Out Two 4 KB Parameter Blocks One 112 KB Main Block 100 000 Erase Program Cycles Per Block Simplified Program and Erase Automated Algorithms via O Intel Corporation data | |
| Esta página es del resultado de búsqueda del N28F001BX-B70. Si pulsa el resultado de búsqueda de N28F001BX-B70 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |