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Datasheet N04 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
24 | N0412N | N-CHANNEL MOSFET N0412N
N-CHANNEL MOSFET FOR SWITCHING
Preliminary Data Sheet
R07DS0554EJ0100 Rev.1.00
Nov 07, 2011
Description
The N0412N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Low on-state resistance RDS (on) = 3.7 mΩ MAX. (VGS = 10 V, ID = 50 A)
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Renesas |
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23 | N0413N | N-CHANNEL MOSFET FOR SWITCHING N0413N
N-CHANNEL MOSFET FOR SWITCHING
Preliminary Data Sheet
R07DS0555EJ0100 Rev.1.00
Nov 07, 2011
Description
The N0413N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Low on-state resistance RDS (on) = 3.3 mΩ MAX. (VGS = 10 V, ID = 50 A)
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Renesas |
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22 | N0416SC020 | Phase Control Thyristor Stud Phase Control Thyristor Stud Types N0416S#020 to N0416S#080
The data sheet on the subsequent pages of this document is a scanned copy of existing data for this product.
(Rating Report 93NR1 Issue 1)
This data reflects the old part number for this product which is: N275PH02-08. This part number must |
IXYS |
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21 | N0416SC040 | Phase Control Thyristor Date:- 23rd Sept 2014 Data Sheet Issue:- 3
Phase Control Thyristor Types N0416SC040 to N0416SC080
Absolute Maximum Ratings
VDRM VDSM VRRM VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1) Non-repetitive peak off-state voltage, (note 1) Repetitive peak reverse voltage, (note 1) Non |
IXYS |
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Número de pieza | Descripción | Fabricantes | |
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