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Datasheet MTN2304M3 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 MTN2304M3   N-Channel Enhancement Mode MOSFET

CYStech Electronics Corp. Spec. No. : C737M3 Issued Date : 2012.07.26 Revised Date : 2013.08.12 Page No. : 1/8 30V N-CHANNEL Enhancement Mode MOSFET MTN2304M3 BVDSS ID Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Pb-free lead plating and hal
 CYStech
CYStech		 datasheet MTN2304M3 pdf

MTN230 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
MTN2306AM3

N-Channel MOSFET

CYStech Electronics Corp. Spec. No. : C414M3 Issued Date : 2012.03.29 Revised Date : 2014.07.01 Page No. : 1/8 N-CHANNEL MOSFET MTN2306AM3 BVDSS ID RDSON@VGS=10V, ID=5.8A RDSON@VGS=4.5V, ID=5A 30V 6.8A 25mΩ(typ) 27mΩ(typ) Features • Low on-resistance • High speed switc
 CYStech
CYStech		 datasheet pdf - CYStech
MTN2302N3

N-Channel Enhancement Mode MOSFET

CYStech Electronics Corp. 20V N-CHANNEL Enhancement Mode MOSFET MTN2302N3 Spec. No. : C323N3 Issued Date : 2004.04.05 Revised Date : 2004.10.22 Page No. : 1/5 .. Features • VDS=20V RDS(ON)=65mΩ@VGS=4.5V, IDS=3.6A RDS(ON)=95mΩ@VGS=2.5V, IDS=3.1A • Advanced trench process
CYStech
CYStech		 datasheet pdf - CYStech
MTN2300N3

N-Channel Enhancement Mode MOSFET

CYStech Electronics Corp. 20V N-CHANNEL Enhancement Mode MOSFET MTN2300N3 Spec. No. : C413N3 Issued Date : 2007.07.05 Revised Date : Page No. : 1/5 Features • VDS=20V RDS(ON)=28mΩ@VGS=4.5V, IDS=6A RDS(ON)=38mΩ@VGS=2.5V, IDS=5.2A • Low on-resistance • Capable of 2.5V gat
 CYStech
CYStech		 datasheet pdf - CYStech


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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