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MT1259P PDF Datasheet

The MT1259P is 256k X 1 Dram. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
1 MT1259P
256K x 1 DRAM

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Micron Technology
Micron Technology
pdf

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Recommended search results related to MT1259P

Part No Description ( Function) Manufacturers PDF
MT1259C   256K x 1 DRAM

w w a D . w S a t e e h U 4 t m o .c w w w .D t a S a e h t e U 4 .c m o w w w .D at h S a t e e 4U . m o c

Micron Technology
Micron Technology
datasheet pdf
2N1259   Small Signal Transistors

Small Signal Transistors TO-39 Case TYPE NO. DESCRIPTION VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ (µA) *ICEO **ICES ***ICEV ****ICER MIN 6.0 6.0 5.0 5.0 7.0 7.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 5.0 6.0 5.0 5.0 5.0 6.0 6.0 6.0 6.0 6.0 5.0 5.0 5.0 7.0 6.0 4.5 6.0 7.0 7.0 6.0 6.0 7.0

ETC
ETC
datasheet pdf
2SA1259   PNP/NPN Epitaxial Planar Silicon Darlington Transistors

Ordering number:ENN1059D PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SA1259/2SC3145 60V/5A for High-Speed Drivers Applications Features · High fT. · High switching speed. · Wide ASO. Package Dimensions unit:mm 2010C [2SA1259/2SC3145] 10.2 3.6 5.1 4.5 1.3

Sanyo Semicon Device
Sanyo Semicon Device
datasheet pdf
2SA1259   Silicon PNP Power Transistors

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= -2.5A ·Low Collector-Emitter Saturation Voltage : VCE(sat) = -1.5V(Max)@ IC= -2.5A ·Complement to Type 2SC3145 isc Product Specification 2SA1259 APPLI

Inchange Semiconductor
Inchange Semiconductor
datasheet pdf
2SB1259   Silicon PNP Epitaxial Planar Transistor(Driver for Solenoid/ Relay and Motor and General Purpose)

(3 k Ω)(1 0 0 Ω) E Darlington sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1259 –120 –120 –6 –10(Pulse–15) –1 30(Tc=25°C) 150 –55 to +150 (Ta=25°C) Unit V V V A A W °C °C 2SB1259 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO

Sanken electric
Sanken electric
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[1]    

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The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

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LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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