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MJE13003-R PDF Datasheet

The MJE13003-R is NPN SilICon Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 MJE13003-R
NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD MJE13003-R NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode.  FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Ind

Unisonic Technologies
Unisonic Technologies
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Recommended search results related to MJE13003-R

Part No Description ( Function) Manufacturers PDF
HMJE13003   NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HT200210 Issued Date : 2001.01.01 Revised Date : 2002.05.08 Page No. : 1/3 HMJE13003 NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls

Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics
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HMJE13003D   NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HD200207 Issued Date : 1993.04.12 Revised Date : 2002.05.08 Page No. : 1/4 HMJE13003D NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Control

Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics
datasheet pdf
HMJE13003T   NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HT200211 Issued Date : 2000.08.01 Revised Date : 2002.05.08 Page No. : 1/3 HMJE13003T NPN EPITAXIAL PLANAR TRANSISTOR Description The HMJE13003T is designed for high voltage. High speed switching inductive circuits and amplifier

Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics
datasheet pdf
MJE13003   TRANSISTORS

深圳深爱半导体股份有限公司 Shenzhen SI Semiconductors Co., LTD. 产品规格书 Product Specification NPN MJE 系列晶体管/MJE SERIES TRANSISTORS MJE13003 ●特点:耐高压 开关速度快 安全工作区宽 符合 RoHS 规范 ■●FEATURES:■HIGH VOLT

SI Semiconductors
SI Semiconductors
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MJE13003   NPN SILICON TRANSISTOR

MJE13003 FEATURES Power dissipation PCM : 1.25 NPN SILICON TRANSISTOR TO 126 W Tamb=25 1.BASE 2.COLLECTOR 3.EMITTER Collector current 1.5 A ICM : Collector-base voltage V(BR)CBO : 700 V 123 ELECTRICAL CHARACTERISTICS Parameter Collector-base breakdown voltage Collector-emi

Wing Shing Computer Components
Wing Shing Computer Components
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