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Datasheet MBR60045CT Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
8 | MBR60045CT | (MBR60020CT - MBR60045CTR) SCHOTTKY DIODES Transys
Electronics
L I M I T E D
MBR60020CT(R) THRU MBR60045CT(R)
SCHOTTKY DIODES MODULE TYPE 600A
Features
High Surge Capability
Types Up to 45V VRRM
600Amp Rectifier 20-45 Volts TWIN TOWER
A R
Maximum Ratings
Operating Temperature: -40 C to +175 Storage Temperature: -40 C to +175 Part Numbe |
TRANSYS |
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7 | MBR60045CT | (MBR60045CT - MBR600100CTR) Schottky Power Diode Naina Semiconductor Ltd.
Features
• • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM
MBR60045CT thru MBR600100CTR
Silicon Schottky Diode, 600A
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive |
Naina Semiconductor |
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6 | MBR60045CT | (MBR60045CT - MBR600100CTR) Silicon Power Schottky Diode Free Datasheet http://www.datasheet4u.net/
Free Datasheet http://www.datasheet4u.net/
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America Semiconductor |
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5 | MBR60045CT | Silicon Power Schottky Diode Silicon Power Schottky Diode
Features • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive
MBR60045CT thru MBR600100CTR
VRRM = 45 V - 100 V IF(AV) = 600 A
Twin Tower Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
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GeneSiC |
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Número de pieza | Descripción | Fabricantes | |
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