MAAPSS0075 PDF Datasheet

RoHS Compliant MAAPSS0075 V1 Functional Schematic VCC1 N/C Linear Power Amplifier 2.4 - 2.5 GHz, 802.11b/g Features • • • • • • • • • • • • • Ideal for 802.11b/g +26 dBm P1dB Typical at 3.3 V 29.5 dB Gain Typical 802.11b compliant to 23 dBm POUT 802.11g compliant to 19 dBm POUT Micro-Amp Shutdown Integrated Detector SiGe Process:

FEATURES AND SPECIFICATIONS Features and Benefits s Pre-assembled contacts s To terminate flat oval telephone cord to REA Modular Plug Electrical Voltage: 125V Current: 1.5A Contact Resistance: 20mΩ max. Dielectric Withstanding Voltage: 1000V rms Insulation Resistance: 500 M

FEATURES AND SPECIFICATIONS Features and Benefits s Pre-assembled contacts s To terminate flat oval telephone cord to REA Modular Plug Electrical Voltage: 125V Current: 1.5A Contact Resistance: 20mΩ max. Dielectric Withstanding Voltage: 1000V rms Insulation Resistance: 500 M

Plerow APL0075 PLL Module Description The plerow PLL synthesizer module was designed for use in wireless and wireline systems in a wide range of frequency from 50 MHz to 6 GHz. ASB’s PLL provides exceptionally low spurious and phase noise performance with f

CGHV60075D5 75 W, 6.0 GHz, GaN HEMT Die Cree’s CGHV60075D5 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and

GWM 120-0075P3 Three phase full bridge with Trench MOSFETs in DCB isolated high current package L+ G3 G1 S3 S1 L1 L2 L3 G4 G2 S4 S2 G6 S6 LS5 G5 VDSS = 75 V ID25 = 125 A RDSon typ. = 3.7 mΩ Pins Gate Pow s er Pin MOSFETs Symbol VDSS VGS ID25 ID90 IF25