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MA5114 PDF Datasheet

The MA5114 is Radiation Hard 1024x4 Bit StatIC Ram. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 MA5114
Radiation hard 1024x4 Bit Static RAM

MA5114 MA5114 Radiation hard 1024x4 Bit Static RAM Replaces June 1999 version, DS3591-4.0 DS3591-5.0 January 2000 The MA5114 4k Static RAM is configured as 1024 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The design uses a 6 transistor cell and has full static operation with no clock or timing strobe required. Address input buff

Dynex
Dynex
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SMA5114   N-channel With built-in flywheel diode

SMA5114 Absolute maximum ratings Symbol VDSS VGSS ID ID(pulse) EAS* IAS PT Ratings 60 ±20 ±3 ±6 (PW≤1ms, Du≤1%) 6.8 3 N-channel With built-in flywheel diode (Ta=25°C) External dimensions B ••• SMA Electrical characteristics Symbol V(BR)DSS IGSS IDSS VTH Re(yfs)

Sanken electric
Sanken electric
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1N5114   3 WATT ZENER DIODES

1N5096-1N5117 MZ211-MZ240 High-reliability discrete products and engineering services since 1977 3 WATT ZENER DIODES FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoH

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1N5114   Diode Zener Single 360V 5% 3W 2-Pin Case A

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2N5114   P-Channel JFET Switch

P-Channel JFET Switch CORPORATION 2N5114 – 2N5116 GENERAL DESCRIPTION Ideal for inverting switching or "Virtual Gnd" switching into inverting input of Op. Amp. No driver is required and ±10VAC signals can be handled using only +5V logic (TTL or CMOS). FEATURES ON Resistance

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