| No | Part number | Description ( Function ) | Manufacturers | |
| 3 | M68Z512 | 4 Mbit 512Kb x8 Low Power SRAM with Output Enable M68Z512 4 Mbit (512Kb x8) Low Power SRAM with Output Enable s ULTRA LOW DATA RETENTION CURRENT – 100nA (typical) – 10µA (max) s s s s s s s OPERATION VOLTAGE: 5V ±10% 512 Kbit x8 SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 70ns LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O CMOS for OPTIMUM SPEED/POWER AUTOMATIC POWER-DOWN WHEN DESELECTED INTENDED FOR USE WI |
 ST Microelectronics |
|
| 2 | M68Z512-70NC1T | 4 Mbit 512Kb x8 Low Power SRAM with Output Enable M68Z512 4 Mbit (512Kb x8) Low Power SRAM with Output Enable s ULTRA LOW DATA RETENTION CURRENT – 100nA (typical) – 10µA (max) s s s s s s s OPERATION VOLTAGE: 5V ±10% 512 Kbit x8 SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 70ns LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O CMOS for OPTIMUM SPEED/POWER AUTOMATIC POWER-DOWN WHEN DESELECTED INTENDED FOR USE WI |
ST Microelectronics |
|
| 1 | M68Z512NC | 4 Mbit 512Kb x8 Low Power SRAM with Output Enable M68Z512 4 Mbit (512Kb x8) Low Power SRAM with Output Enable s ULTRA LOW DATA RETENTION CURRENT – 100nA (typical) – 10µA (max) s s s s s s s OPERATION VOLTAGE: 5V ±10% 512 Kbit x8 SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 70ns LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O CMOS for OPTIMUM SPEED/POWER AUTOMATIC POWER-DOWN WHEN DESELECTED INTENDED FOR USE WI |
ST Microelectronics |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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