No | Part number | Description ( Function ) | Manufacturers | |
1 | M5M4464P-12 | 256K-Bit DRAM MITSUBISHI LSls MsM4464P-12, -15 262 144-BIT(65 536-WORD BY 4-BIT) DYNAMIC RAM DESCRIPTION This is family of 65536-word by 4-bit dynamic RAMs, fabricated with the high performance N-channel silicon-gate MOS process, and is ideal for large-ca-pacity memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer polysilicon process t |
Mitsubishi |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to M5M4464P-12 |
Part No | Description ( Function) | Manufacturers | |
M5M4464P-15 | 256K-Bit DRAM MITSUBISHI LSls MsM4464P-12, -15 262 144-BIT(65 536-WORD BY 4-BIT) DYNAMIC RAM DESCRIPTION This is family of 65536-word by 4-bit dynamic RAMs, fabricated with the high performance N-channel silicon-gate MOS process, and is ideal for large-ca-pacity memory systems where high spee |
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List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |