| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | M59DR008 | 8 Mbit 512Kb x16 / Dual Bank / Page Low Voltage Flash Memory M59DR008E M59DR008F 8 Mbit (512Kb x16, Dual Bank, Page) Low Voltage Flash Memory PRODUCT PREVIEW s SUPPLY VOLTAGE – VDD = VDDQ = 1.65V to 2.2V: for Program, Erase and Read – VPP = 12V: optional Supply Voltage for fast Program and Erase s ASYNCHRONOUS PAGE MODE READ BGA – Page Width: 4 words – Page Access: 35ns – Random Access: 100ns s PROGRAMMING TIME – 10µs b |
 ST Microelectronics |
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Recommended search results related to M59DR008 |
| Part No | Description ( Function) | Manufacturers | |
| B59008 | Limit Temperature Sensors Sensors Limit Temperature Sensors, Leaded Disks, Coated Applications I Sensors for small measuring points I Limit temperature monitoring B59008 C8 Features I Tinned leads I Marked with coded nominal threshold temperature I Characteristics for nominal threshold temperatures of |
 EPCOS |
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| B59008B | (B59xxx) Line Card Applications Telecom Line Card Applications, Leaded Disks Applications I Overcurrent protection for line cards B59*** B 10**, B 11**, B 16**, C 10** Features I Compliant with ITU-T K20, K21, K45 – basic level lightning surges (10/700 µs) – basic level power induction (600 V, 1 A, 0,2 |
EPCOS |
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| B59008B | (B59xxx) Line Card Applications Telecom Line Card Applications, Leaded Disks Applications I Overcurrent protection for line cards B59*** B 10**, B 11**, B 16**, C 10** Features I Compliant with ITU-T K20, K21, K45 – basic level lightning surges (10/700 µs) – basic level power induction (600 V, 1 A, 0,2 |
EPCOS |
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| M59DR016 | 16 Mbit 1Mb x16 / Dual Bank / Page 1.8V Supply Flash Memory M59DR016C M59DR016D 16 Mbit (1Mb x16, Dual Bank, Page) 1.8V Supply Flash Memory PRODUCT PREVIEW s SUPPLY VOLTAGE – VDD = VDDQ = 1.65V to 2.2V for Program, Erase and Read s – VPP = 12V for fast Program (optional) ASYNCHRONOUS PAGE MODE READ – Page Width: 4 words – Page |
ST Microelectronics |
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| M59DR032A | 32 Mbit 2Mb x16 / Dual Bank / Page Low Voltage Flash Memory M59DR032A M59DR032B 32 Mbit (2Mb x16, Dual Bank, Page) Low Voltage Flash Memory PRELIMINARY DATA s SUPPLY VOLTAGE – VDD = VDDQ = 1.65V to 2.2V: for Program, Erase and Read – VPP = 12V: optional Supply Voltage for fast Program and Erase s ASYNCHRONOUS PAGE MODE READ BGA � |
ST Microelectronics |
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List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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