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Datasheet M59BW102 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | M59BW102 | 1 Mbit 64Kb x16 / Burst Low Voltage Flash Memory M59BW102
1 Mbit (64Kb x16, Burst) Low Voltage Flash Memory
PRELIMINARY DATA
s
2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS SEQUENTIAL CYCLE TIME: 25ns RANDOM ACCESS TIME PROGRAMMING TIME: 10µs typical INTERLEAVED ACCESS TIME: 16ns CONTINUOUS MEMORY INTERLEAVING
TSOP40 (N) 10 x |
 ST Microelectronics |
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| 2 | M59BW10225N1T | 1 Mbit 64Kb x16 / Burst Low Voltage Flash Memory M59BW102
1 Mbit (64Kb x16, Burst) Low Voltage Flash Memory
PRELIMINARY DATA
s
2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS SEQUENTIAL CYCLE TIME: 25ns RANDOM ACCESS TIME PROGRAMMING TIME: 10µs typical INTERLEAVED ACCESS TIME: 16ns CONTINUOUS MEMORY INTERLEAVING
TSOP40 (N) 10 x |
ST Microelectronics |
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| 1 | M59BW102N | 1 Mbit 64Kb x16 / Burst Low Voltage Flash Memory M59BW102
1 Mbit (64Kb x16, Burst) Low Voltage Flash Memory
PRELIMINARY DATA
s
2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS SEQUENTIAL CYCLE TIME: 25ns RANDOM ACCESS TIME PROGRAMMING TIME: 10µs typical INTERLEAVED ACCESS TIME: 16ns CONTINUOUS MEMORY INTERLEAVING
TSOP40 (N) 10 x |
ST Microelectronics |
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| Número de pieza | Descripción | Fabricantes | |
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