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M58WR064ET PDF Datasheet

The M58WR064ET is 64 Mbit 4mb X 16 / Multiple Bank / Burst. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 M58WR064ET
64 Mbit 4Mb x 16 / Multiple Bank / Burst 1.8V Supply Flash Memory

M58WR064ET M58WR064EB 64 Mbit (4Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) s Figure 1. Package SYNCHRONOUS / ASYNCHRONOUS READ – Synchronous Burst Read mode: 54MHz – Asynchronous/ Synchronous

ST Microelectronics
ST Microelectronics
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Recommended search results related to M58WR064ET

Part No Description ( Function) Manufacturers PDF
M58WR064B   (M58WR064B/T) FLASH MEMORY

M58WR064T M58WR064B 64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) s Figu

STMicroelectronics
STMicroelectronics
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M58WR064EB   64 Mbit 4Mb x 16 / Multiple Bank / Burst 1.8V Supply Flash Memory

M58WR064ET M58WR064EB 64 Mbit (4Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) s Figure 1. Package S

ST Microelectronics
ST Microelectronics
datasheet pdf
M58WR064HB   1.8 V supply Flash memories

M58WR064HT M58WR064HB 64 Mbit (4 Mb x16, multiple bank, burst) 1.8 V supply Flash memories Features ■ Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2.24 V for I/O buffers – VPP = 12 V for fast program (optional) Sy

ST Microelectronics
ST Microelectronics
datasheet pdf
M58WR064HT   1.8 V supply Flash memories

M58WR064HT M58WR064HB 64 Mbit (4 Mb x16, multiple bank, burst) 1.8 V supply Flash memories Features ■ Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2.24 V for I/O buffers – VPP = 12 V for fast program (optional) Sy

ST Microelectronics
ST Microelectronics
datasheet pdf
M58WR064KL   (M58WR032Kx / M58WR064Kx / M58WR016Kx) Flash memories

M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit (x 16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memories Features ■ Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers – VPP

ST Microelectronics
ST Microelectronics
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