No | Part number | Description ( Function ) | Manufacturers | |
1 | M58WR016KL | (M58WR032Kx / M58WR064Kx / M58WR016Kx) Flash memories M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit (x 16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memories Features ■ Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers – VPP = 9 V for fast Program Multiplexed address/data Synchronous / Asynchronous Read – Synchronous Bur |
ST Microelectronics |
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Recommended search results related to M58WR016KL |
Part No | Description ( Function) | Manufacturers | |
M58WR016KU | (M58WR032Kx / M58WR064Kx / M58WR016Kx) Flash memories M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit (x 16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memories Features ■ Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers – VPP |
ST Microelectronics |
|
SY58016L | DIFFERENTIAL CML LINE DRIVER/RECEIVER 3.3V 10Gbps DIFFERENTIAL CML LINE DRIVER/RECEIVER WITH INTERNAL TERMINATION FEATURES s s s s s s s s Accepts up to 10.7Gbps data < 45ps edge rate Gain ≥ 4V/V CML/PECL differential inputs CML outputs Internal 50Ω input termination Internal 50Ω output loa |
Micrel Semiconductor |
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Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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ON Semiconductor |
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