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M58CR064QZB PDF Datasheet

The M58CR064QZB is 64 Mbit 4mb X 16 / Dual Bank / Burst. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 M58CR064QZB
64 Mbit 4Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory

M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit (4Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) s Figure 1. Package SYNCHRONOUS / ASYNCHRONOUS READ – Synchronous Burst Read mode : 54MHz – Asynchrono

ST Microelectronics
ST Microelectronics
pdf

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Recommended search results related to M58CR064QZB

Part No Description ( Function) Manufacturers PDF
M58CR064-ZBT   64 Mbit 4Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory

M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit (4Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) s Figur

ST Microelectronics
ST Microelectronics
datasheet pdf
M58CR064C   64 Mbit 4Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory

M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit (4Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) s Figur

ST Microelectronics
ST Microelectronics
datasheet pdf
M58CR064C10ZB6T   64 Mbit 4Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory

M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit (4Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) s Figur

ST Microelectronics
ST Microelectronics
datasheet pdf
M58CR064C12ZB6T   64 Mbit 4Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory

M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit (4Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) s Figur

ST Microelectronics
ST Microelectronics
datasheet pdf
M58CR064C85ZB6T   64 Mbit 4Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory

M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit (4Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) s Figur

ST Microelectronics
ST Microelectronics
datasheet pdf

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