No | Part number | Description ( Function ) | Manufacturers | |
1 | M58CR064QZB | 64 Mbit 4Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit (4Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) s Figure 1. Package SYNCHRONOUS / ASYNCHRONOUS READ – Synchronous Burst Read mode : 54MHz – Asynchrono |
ST Microelectronics |
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Recommended search results related to M58CR064QZB |
Part No | Description ( Function) | Manufacturers | |
M58CR064-ZBT | 64 Mbit 4Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit (4Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) s Figur |
ST Microelectronics |
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M58CR064C | 64 Mbit 4Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit (4Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) s Figur |
ST Microelectronics |
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M58CR064C10ZB6T | 64 Mbit 4Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit (4Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) s Figur |
ST Microelectronics |
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M58CR064C12ZB6T | 64 Mbit 4Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit (4Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) s Figur |
ST Microelectronics |
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M58CR064C85ZB6T | 64 Mbit 4Mb x 16 / Dual Bank / Burst 1.8V Supply Flash Memory M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit (4Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) s Figur |
ST Microelectronics |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |