No | Part number | Description ( Function ) | Manufacturers | |
1 | M48Z35Y | 256 Kbit (32 Kbit x 8) ZEROPOWER SRAM M48Z35 M48Z35Y 256 Kbit (32 Kbit x 8) ZEROPOWER® SRAM Features ■ Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages: (VPFD = power-fail deselect voltage) – M48Z35: VCC = 4.75 to 5.5 V; 4.5 V ≤ VPFD ≤ 4.75 V – M48Z3 |
ST Microelectronics |
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Recommended search results related to M48Z35Y |
Part No | Description ( Function) | Manufacturers | |
M48Z35 | 256 Kbit (32 Kbit x 8) ZEROPOWER SRAM M48Z35 M48Z35Y 256 Kbit (32 Kbit x 8) ZEROPOWER® SRAM Features ■ Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages: (VPFD |
ST Microelectronics |
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M48Z35AV | 256 Kbit (32 Kbit x 8) ZEROPOWER SRAM M48Z35AV 5.0 V or 3.3 V, 256 Kbit (32 Kbit x 8) ZEROPOWER® SRAM Not recommended for new design Features ■ Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time )■ Battery low flag (BOK) t(s■ Automatic pow |
ST Microelectronics |
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M48Z35AY | 256 Kbit 32Kb x8 ZEROPOWER SRAM M48Z35AY M48Z35AV 256 Kbit (32Kb x8) ZEROPOWER® SRAM s INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY READ CYCLE TIME EQUALS WRITE CYCLE TIME BATTERY LOW FLAG (BOK) AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION WRITE PROTECT VOLTAGES (VPFD = P |
ST Microelectronics |
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2SC4835 | Silicon NPN epitaxial planer type(For UHF band low-noise amplification) Transistor 2SC4835 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit: mm 2.1±0.1 s Features q q q q 0.425 1.25±0.1 0.425 Low noise figure NF. High gain. High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and a |
Panasonic Semiconductor |
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4835 | P-Channel Enhancement Mode Field Effect Transistor Shenzhen Tuofeng Semiconductor Technology co., LTD 4835 P-Channel Enhancement Mode MOSFET Features Pin Description • -30V/-8A, RDS(ON) = 16mΩ(typ.) @ VGS = -10V RDS(ON) = 24mΩ(typ.) @ VGS = -4.5V • Super High Density Cell Design • Reliable and Rugged • SO-8 Packag |
Tuofeng Semiconductor |
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Vishay |
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