No | Part number | Description ( Function ) | Manufacturers | |
3 | M48Z128 | 1 Mbit (128 Kbit x 8) ZEROPOWER SRAM M48Z128 M48Z128Y 5.0 V, 1 Mbit (128 Kbit x 8) ZEROPOWER® SRAM Not recommended for new design Features ■ Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ Conventional SRAM operation; unlimited )WRITE cycles t(s■ 10 years of data retention in the absence of cpower du■ Battery internally isolated until power is first roapplied P■ Automati |
ST Microelectronics |
|
2 | M48Z128V | 5.0V OR 3.3V / 1 Mbit (128 Kbit x 8) ZEROPOWER SRAM M48Z128 M48Z128Y, M48Z128V* 5.0V OR 3.3V, 1 Mbit (128 Kbit x 8) ZEROPOWER® SRAM FEATURES SUMMARY s INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY s Figure 1. 32-pin PMDIP Module CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS OF DATA RETENTION IN THE ABSENCE OF POWER BATTERY INTERNALLY ISOLATED UNTIL POWER IS FIRST APPLIED AUTOMATIC PO |
ST Microelectronics |
|
1 | M48Z128Y | 1 Mbit (128 Kbit x 8) ZEROPOWER SRAM M48Z128 M48Z128Y 5.0 V, 1 Mbit (128 Kbit x 8) ZEROPOWER® SRAM Not recommended for new design Features ■ Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ Conventional SRAM operation; unlimited )WRITE cycles t(s■ 10 years of data retention in the absence of cpower du■ Battery internally isolated until power is first roapplied P■ Automati |
ST Microelectronics |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |