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Datasheet M48Z12 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | M48Z12 | 16 Kbit (2 Kb x 8) ZEROPOWER SRAM M48Z02 M48Z12
5 V, 16 Kbit (2 Kb x 8) ZEROPOWER® SRAM
Features
■ Integrated, ultra low power SRAM and powerfail control circuit
■ Unlimited WRITE cycles
■ READ cycle time equals WRITE cycle time
■ Automatic power-fail chip deselect and WRITE protection
■ WRITE protect voltages (VPFD = po |
 ST Microelectronics |
 |
| 5 | M48Z128 | 1 Mbit (128 Kbit x 8) ZEROPOWER SRAM M48Z128 M48Z128Y
5.0 V, 1 Mbit (128 Kbit x 8) ZEROPOWER® SRAM
Not recommended for new design
Features
■ Integrated, ultra low power SRAM, power-fail
control circuit, and battery
■ Conventional SRAM operation; unlimited
)WRITE cycles t(s■ 10 years of data retention in the absence of cpowe |
ST Microelectronics |
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| 4 | M48Z128V | 5.0V OR 3.3V / 1 Mbit (128 Kbit x 8) ZEROPOWER SRAM M48Z128 M48Z128Y, M48Z128V*
5.0V OR 3.3V, 1 Mbit (128 Kbit x 8) ZEROPOWER® SRAM
FEATURES SUMMARY s INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY
s
Figure 1. 32-pin PMDIP Module
CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS OF DATA RETENTION IN THE ABSENC |
ST Microelectronics |
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| 3 | M48Z128Y | 1 Mbit (128 Kbit x 8) ZEROPOWER SRAM M48Z128 M48Z128Y
5.0 V, 1 Mbit (128 Kbit x 8) ZEROPOWER® SRAM
Not recommended for new design
Features
■ Integrated, ultra low power SRAM, power-fail
control circuit, and battery
■ Conventional SRAM operation; unlimited
)WRITE cycles t(s■ 10 years of data retention in the absence of cpowe |
ST Microelectronics |
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