No | Part number | Description ( Function ) | Manufacturers | |
1 | M30810MC-XXXGP | SINGLE-CHIP 16/32-BIT CMOS MICROCOMPUTER M32C/81 Group SINGLE-CHIP 16/32-BIT CMOS MICROCOMPUTER REJ03B0031-0100Z Rev.1.00 Jun. 01, 2004 1. Overview The M32C/81 group microcomputer is a single-chip control unit that utilizes high-performance silicon gate CMOS technology with the M32C/80 series CPU core. The M32C/81 group is available in 144-pin and 100pin plastic molded LQFP/QFP packages. With a 16-Mbyte address spac |
Renesas |
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Part No | Description ( Function) | Manufacturers | |
M30810MC-XXXFP | SINGLE-CHIP 16/32-BIT CMOS MICROCOMPUTER M32C/81 Group SINGLE-CHIP 16/32-BIT CMOS MICROCOMPUTER REJ03B0031-0100Z Rev.1.00 Jun. 01, 2004 1. Overview The M32C/81 group microcomputer is a single-chip control unit that utilizes high-performance silicon gate CMOS technology with the M32C/80 series CPU core. The M32C/81 gro |
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C30810 | (C30807 - C30831) N-Type Silicon PIN Photodetectors N-Type Silicon PIN Photodetectors C30807, C30808, C30809, C30810, C30822, C30831 EVERYTHING IN A NEW LIGHT. Description This family of N-type silicon p-i-n photodiodes is designed for use in a wide variety of broad band low light level applications covering the spectral range fr |
PerkinElmer Optoelectronics |
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M53230810CB0 | (M532308x0CB0/CW0) DRAM Module DRAM MODULE M53230800CW0/CB0 & M53230810CW0/CB0 EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION The Samsung M5323080(1)0C is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M5323080(1)0C consists of sixteen CMOS 4M |
Samsung Semiconductor |
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M53230810CW0 | (M532308x0CB0/CW0) DRAM Module DRAM MODULE M53230800CW0/CB0 & M53230810CW0/CB0 EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION The Samsung M5323080(1)0C is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M5323080(1)0C consists of sixteen CMOS 4M |
Samsung Semiconductor |
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M53230810DB0 | (M532308x0DB0/DW0) DRAM Module DRAM MODULE M53230800DW0/DB0 & M53230810DW0/DB0 EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION The Samsung M5323080(1)0D is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M5323080(1)0D consists of sixteen CMOS 4M |
Samsung Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |