No | Part number | Description ( Function ) | Manufacturers | |
5 | M2S12D30TP | 512M Double Data Rate Synchronous DRAM DDR SDRAM (Rev.1.1) Feb.ELECTRIC '02 MITSUBISHI MITSUBISHI LSIs M2S12D20/ 30TP -75, -75L, -10, -10L 512M Double Data Rate Synchronous DRAM DESCRIPTION M2S12D20TP is a 4-bank x 33,554,432-word x 4-bit, M2S12D30TP is a 4-bank x 16,777,216-word x 8-bit, double data rate synchronous DRAM, with SSTL_2 interface. All control and address signals are referenced to the rising edge of |
Mitsubishi |
|
4 | M2S12D30TP-10 | 512M Double Data Rate Synchronous DRAM DDR SDRAM (Rev.1.1) Feb.ELECTRIC '02 MITSUBISHI MITSUBISHI LSIs M2S12D20/ 30TP -75, -75L, -10, -10L 512M Double Data Rate Synchronous DRAM DESCRIPTION M2S12D20TP is a 4-bank x 33,554,432-word x 4-bit, M2S12D30TP is a 4-bank x 16,777,216-word x 8-bit, double data rate synchronous DRAM, with SSTL_2 interface. All control and address signals are referenced to the rising edge of |
Mitsubishi |
|
3 | M2S12D30TP-10L | 512M Double Data Rate Synchronous DRAM DDR SDRAM (Rev.1.1) Feb.ELECTRIC '02 MITSUBISHI MITSUBISHI LSIs M2S12D20/ 30TP -75, -75L, -10, -10L 512M Double Data Rate Synchronous DRAM DESCRIPTION M2S12D20TP is a 4-bank x 33,554,432-word x 4-bit, M2S12D30TP is a 4-bank x 16,777,216-word x 8-bit, double data rate synchronous DRAM, with SSTL_2 interface. All control and address signals are referenced to the rising edge of |
Mitsubishi |
|
2 | M2S12D30TP-75 | 512M Double Data Rate Synchronous DRAM DDR SDRAM (Rev.1.1) Feb.ELECTRIC '02 MITSUBISHI MITSUBISHI LSIs M2S12D20/ 30TP -75, -75L, -10, -10L 512M Double Data Rate Synchronous DRAM DESCRIPTION M2S12D20TP is a 4-bank x 33,554,432-word x 4-bit, M2S12D30TP is a 4-bank x 16,777,216-word x 8-bit, double data rate synchronous DRAM, with SSTL_2 interface. All control and address signals are referenced to the rising edge of |
Mitsubishi |
|
1 | M2S12D30TP-75L | 512M Double Data Rate Synchronous DRAM DDR SDRAM (Rev.1.1) Feb.ELECTRIC '02 MITSUBISHI MITSUBISHI LSIs M2S12D20/ 30TP -75, -75L, -10, -10L 512M Double Data Rate Synchronous DRAM DESCRIPTION M2S12D20TP is a 4-bank x 33,554,432-word x 4-bit, M2S12D30TP is a 4-bank x 16,777,216-word x 8-bit, double data rate synchronous DRAM, with SSTL_2 interface. All control and address signals are referenced to the rising edge of |
Mitsubishi |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |