No | Part number | Description ( Function ) | Manufacturers | |
2 | M29W800DB | 3V supply flash memory M29W800DT M29W800DB 8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory Features Supply voltage – VCC = 2.7 V to 3.6 V for program, erase and read Access times: 45, 70, 90 ns Programming time – 10 μs per byte/word typical 19 memory blocks – 1 boot block (top or bottom location) – 2 parameter and 16 main blocks Program/erase control |
Numonyx |
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1 | M29W800DB | 8 Mbit (1Mb x8 or 512Kb x16 / Boot Block) 3V Supply Flash Memory M29W800DT M29W800DB 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages ACCESS TIME: 70, 90ns PROGRAMMING TIME – 10µs per Byte/Word typical 19 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 16 Main Blocks SO44 (M) s s PROGR |
ST Microelectronics |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |