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M29W640DT90N6T PDF Datasheet

The M29W640DT90N6T is 64 Mbit 8mb X8 Or 4mb X16 / Boot Block. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 M29W640DT90N6T
64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory

M29W640DT M29W640DB 64 Mbit (8Mb x8 or 4Mb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) s s Figure 1. Packages ACCESS TIME: 70, 90 ns PROGRAMMING TIME – 10 µs per Byte/Word typical – Double Word Programming Option s 135 MEMORY BLOCKS

ST Microelectronics
ST Microelectronics
pdf

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Recommended search results related to M29W640DT90N6T

Part No Description ( Function) Manufacturers PDF
M29W640DT90N6E   64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory

M29W640DT M29W640DB 64 Mbit (8Mb x8 or 4Mb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) s s Figure 1. Packages ACCESS TIME: 70, 90 ns PROGRAM

ST Microelectronics
ST Microelectronics
datasheet pdf
M29W640DT90N6F   64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory

M29W640DT M29W640DB 64 Mbit (8Mb x8 or 4Mb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) s s Figure 1. Packages ACCESS TIME: 70, 90 ns PROGRAM

ST Microelectronics
ST Microelectronics
datasheet pdf
M29W640DT90N1E   64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory

M29W640DT M29W640DB 64 Mbit (8Mb x8 or 4Mb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) s s Figure 1. Packages ACCESS TIME: 70, 90 ns PROGRAM

ST Microelectronics
ST Microelectronics
datasheet pdf
M29W640DT90N1F   64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory

M29W640DT M29W640DB 64 Mbit (8Mb x8 or 4Mb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) s s Figure 1. Packages ACCESS TIME: 70, 90 ns PROGRAM

ST Microelectronics
ST Microelectronics
datasheet pdf
M29W640DT90N1T   64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory

M29W640DT M29W640DB 64 Mbit (8Mb x8 or 4Mb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) s s Figure 1. Packages ACCESS TIME: 70, 90 ns PROGRAM

ST Microelectronics
ST Microelectronics
datasheet pdf

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