No | Part number | Description ( Function ) | Manufacturers | |
1 | M29W400DT70M1T | 4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory M29W400DT M29W400DB 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages ACCESS TIME: 45, 55, 70ns PROGRAMMING TIME – 10µs per Byte/Word typical 11 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 8 Main Block |
ST Microelectronics |
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Recommended search results related to M29W400DT70M1T |
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M29W400DT70M1E | 4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory M29W400DT M29W400DB 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages ACCESS TIME: 45, 55, 70ns PROGRAMMING TIME – 10µs per Byte/Word |
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M29W400DT70M1F | 4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory M29W400DT M29W400DB 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages ACCESS TIME: 45, 55, 70ns PROGRAMMING TIME – 10µs per Byte/Word |
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M29W400DT70M6E | 4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory M29W400DT M29W400DB 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages ACCESS TIME: 45, 55, 70ns PROGRAMMING TIME – 10µs per Byte/Word |
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M29W400DT70M6F | 4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory M29W400DT M29W400DB 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages ACCESS TIME: 45, 55, 70ns PROGRAMMING TIME – 10µs per Byte/Word |
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M29W400DT70M6T | 4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory M29W400DT M29W400DB 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages ACCESS TIME: 45, 55, 70ns PROGRAMMING TIME – 10µs per Byte/Word |
ST Microelectronics |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |