No | Part number | Description ( Function ) | Manufacturers | |
10 | M29W320 | 32 Mbit 4Mb x8 or 2Mb x16 / Boot Block 3V Supply Flash Memory M29W320DT M29W320DB 32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns PROGRAMMING TIME – 10µs per Byte/Word typical 67 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter |
ST Microelectronics |
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9 | M29W320DB | 32 Mbit 4Mb x8 or 2Mb x16 / Boot Block 3V Supply Flash Memory M29W320DT M29W320DB 32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns PROGRAMMING TIME – 10µs per Byte/Word typical 67 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter |
ST Microelectronics |
|
8 | M29W320DT | 32 Mbit 4Mb x8 or 2Mb x16 / Boot Block 3V Supply Flash Memory M29W320DT M29W320DB 32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns PROGRAMMING TIME – 10µs per Byte/Word typical 67 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter |
ST Microelectronics |
|
7 | M29W320E | 32-Mbit 3V Supply Flash Memory M29W320ET M29W320EB 32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ACCESS TIMES: 70, 90ns PROGRAMMING TIME – 10µs per Byte/Word typical – Double Word/ Quadruple Byte Program MEMORY BLOCKS – Memory Array: 63 Main Blocks |
ST Microelectronics |
|
6 | M29W320EB | 32-Mbit 3V supply Flash memory M29W320ET M29W320EB 32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory Features Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) Access times: 70, 90ns Programming time – 10μs per byte/word typical – Double word/ Quadruple byte Program Memory Blocks – Memory Array: |
Numonyx |
|
5 | M29W320EB | 32-Mbit 3V Supply Flash Memory M29W320ET M29W320EB 32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIMES: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical – Double Word/ Quadruple Byte Program ■ MEMORY BLOCKS – Memory Array: 63 Main Bloc |
STMicroelectronics |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |