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M29W320 PDF Datasheet

The M29W320 is 32 Mbit 4mb X8 Or 2mb X16 / Boot Block. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




Notice


Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
10 M29W320
32 Mbit 4Mb x8 or 2Mb x16 / Boot Block 3V Supply Flash Memory

M29W320DT M29W320DB 32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns PROGRAMMING TIME – 10µs per Byte/Word typical 67 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter

ST Microelectronics
ST Microelectronics
pdf
9 M29W320DB
32 Mbit 4Mb x8 or 2Mb x16 / Boot Block 3V Supply Flash Memory

M29W320DT M29W320DB 32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns PROGRAMMING TIME – 10µs per Byte/Word typical 67 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter

ST Microelectronics
ST Microelectronics
pdf
8 M29W320DT
32 Mbit 4Mb x8 or 2Mb x16 / Boot Block 3V Supply Flash Memory

M29W320DT M29W320DB 32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read s s Figure 1. Packages – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns PROGRAMMING TIME – 10µs per Byte/Word typical 67 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter

ST Microelectronics
ST Microelectronics
pdf
7 M29W320E
32-Mbit 3V Supply Flash Memory

M29W320ET M29W320EB 32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ACCESS TIMES: 70, 90ns PROGRAMMING TIME – 10µs per Byte/Word typical – Double Word/ Quadruple Byte Program MEMORY BLOCKS – Memory Array: 63 Main Blocks

ST Microelectronics
ST Microelectronics
pdf
6 M29W320EB
32-Mbit 3V supply Flash memory

M29W320ET M29W320EB 32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory Features „ Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) „ Access times: 70, 90ns „ Programming time – 10μs per byte/word typical – Double word/ Quadruple byte Program „ Memory Blocks – Memory Array:

Numonyx
Numonyx
pdf
5 M29W320EB
32-Mbit 3V Supply Flash Memory

M29W320ET M29W320EB 32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIMES: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical – Double Word/ Quadruple Byte Program ■ MEMORY BLOCKS – Memory Array: 63 Main Bloc

STMicroelectronics
STMicroelectronics
pdf

[1]    [2]    

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Part Number Function Manufacturers PDF
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Vishay Semiconductor
Vishay
pdf
LM317

This is a popular adjustable voltage regulator.
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On Semiconductor
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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

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