No | Part number | Description ( Function ) | Manufacturers | |
3 | M29W004B | 4 Mbit 512Kb x8 / Boot Block Low Voltage Single Supply Flash Memory M29W004T M29W004B 4 Mbit (512Kb x8, Boot Block) Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN M29W004T and M29W004B are replaced respectively by the M29W004BT and M29W004BB 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns FAST PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte – Stat |
ST Microelectronics |
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2 | M29W004BB | 4 Mbit 512Kb x8 / Boot Block Low Voltage Single Supply Flash Memory M29W004BT M29W004BB 4 Mbit (512Kb x8, Boot Block) Low Voltage Single Supply Flash Memory s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 55ns PROGRAMMING TIME – 10µs by Byte typical 11 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 8 Main Blocks s s s s PROGRAM/ERASE CONTROLLER – Embedded Byte Progra |
ST Microelectronics |
|
1 | M29W004BT | 4 Mbit 512Kb x8 / Boot Block Low Voltage Single Supply Flash Memory M29W004BT M29W004BB 4 Mbit (512Kb x8, Boot Block) Low Voltage Single Supply Flash Memory s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 55ns PROGRAMMING TIME – 10µs by Byte typical 11 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 8 Main Blocks s s s s PROGRAM/ERASE CONTROLLER – Embedded Byte Progra |
ST Microelectronics |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |